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Fundamentals of Modern VLSI Devices 3rd ed. H 622 p. '22

Fundamentals of Modern VLSI Devices 3rd ed. H 622 p. '22

著者：Taur, Yuan/Ning, Tak H.


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手配先：海外仕入UK他
  • 現地価格：£49.99
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内容の説明

A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry. ・Updated throughout to cover a variety of recent developments, including FinFETs and fully-depleted SOI devices ・Integrated appendices to allow for a smoother reading experience ・Added homework exercises at the end of chapters in order to engage students with real-life problems and test their understanding

登録情報

商品コード：1033192011
出版社: Cambridge University Press
出版年月: 2021/12
ISBN-10: 1108480020
ISBN-13: 978-1-108-48002-4
出版国: イギリス
装丁: hardcover/Geb./rel.
媒体: 冊子
ページ数: 622 p.
ジャンル:



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